TOKYO, JAPAN, December 19, 2005
- Elpida Memory, Inc. (Elpida), Japan's leading global supplier of
Dynamic Random Access Memory (DRAM), today announced the shipment of 80
nm-based 2 Gigabit DDR2 SDRAM samples. These samples are among the
first 80 nm-based devices in the world to be shipped for customer
evaluation, and the devices are expected to be used first in
high-density memory modules for high performance servers.
in the 80 nm production process technology is the fact that devices
using this process will be even smaller in size, although their density
is greater," said Jun Kitano, director of technical marketing for
Elpida Memory (USA) Inc. "Based on market demand, Elpida intends to use
the 80 nm process for its most advanced DRAM devices at its newly
expanded 300 mm wafer manufacturing facility (the E300 Fab) in
Features and Benefits of 2 Gigabit DDR2 SDRAM:
The 2 Gigabit DDR2 SDRAM devices are available in three different data
rate speeds: 533 Mega bits per second (Mbps), 667 Mbps, or 800 Mbps.
They are organized as either 64 M words x 4 bits x 8 banks or as 32 M
words x 8 bits x 8 banks. The supply voltage (VDD) is 1.8V+/-0.1V, and
the operating temperature range (Tc) is 0 to 85°C. The devices are
available in 68-ball FBGA packages for easy mounting on Dual In-line
Memory Modules (DIMMs).
Summary of Features
||80 nm (ArF scanner adoption)
||64 M words x 4 bits x 8 banks
32 M words x 8 bits x 8 banks
|Supply voltage (VDD)
||800 Mbps, 667 Mbps, 533 Mbps
|Operating temperature range
||Tc = 0 to 85°C
Elpida originally announced details on the development of 80 nm-based DDR2 SDRAM components on June 23, 2005 (Elpida Memory Develops 2 Gigabit DDR2 SDRAM Using 80 nm Process Technology for Servers).
Elpida's 2 Gigabit DDR2 SDRAM devices are currently available to
customers as samples and volume production will begin in accordance
with market demand.
Source: Elpida Press Release