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 20.08.2011   Samsung sviluppa RAM DDR3 a 30nm con la tecnologia 3D TSV
 

Samsung Electronics ha annunciato il completamento della fase di sviluppo, con la conseguente disponibilità dei primi sample engineering, di nuovi moduli di RAM DDR3 di tipo Registered Dual Inline Memory Modules (RDIMMs) caratterizzati da una capacità di 32GB e finalizzati all'impiego nei sistemi di tipo server ad elevate prestazioni.

I nuovi moduli di RAM realizzati da Samsung si fanno notare non soltanto per la considerevole capacità di memorizzazione, ma anche per le alte performance, dal momento che vantano un data rate massimo pari a 1.333MB/s, e dunque superiore di circa il 67% a quello assicurato dalle corrispondenti soluzioni attuali, e, nello stesso tempo, per il consumo di potenza molto ridotto, e pari nello specifico a 4.5W/h.

Samsung è riuscita a coniugare esigenze e aspetti contrastanti, come le prestazioni da un lato e il basso consumo di potenza dall'altro, e ottenere nel contempo moduli di grande capacità, grazie alla tecnologia di fabbricazione di tipo 3D TSV (Through Silicon Via), che utilizza un processo a 30nm.

Samsung non ha ancora fornito alcuna tempistica ufficiale in merito al passaggio in produzione dei nuovi moduli RDIMM.


[Immagine ad alta risoluzione]

[Immagine ad alta risoluzione]


Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the development of 32 gigabyte (GB) double data rate-3 (DDR3) registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology.

Samsung’s advanced 30 nanometer (nm) class* technology leverages module performance and power features to deliver a substantially greener memory solution than the preceding 40nm-class based modules. Engineering samples have been released for evaluation.

"These 32GB RDIMMs fully support the high-density and high-performance requirements of next-generation high-capacity servers," said Wanhoon Hong, executive vice president, memory sales & marketing, Device Solutions, Samsung Electronics. "We will keep providing memory solutions with higher performance and density, while enhancing shared value in the design of ever-greener server systems," he added.

The new 32GB RDIMM with 3D TSV package technology is based on Samsung’s 30nm-class four gigabit (Gb) DDR3. It can transmit at speeds of up to 1,333 megabits per second (Mbps), a 70 percent gain over preceding quad-rank 32GB RDIMMs with operational speeds of 800Mbps.

Further, the 32GB-module consumes a mere 4.5 watts per hour – the lowest power consumption level among memory modules adopted for use in enterprise servers. Compared to the 30nm-class 32GB load-reduced, dual-inline memory module (LRDIMM), which offers advantages in constructing 32GB or higher memory solutions, the new 32GB module provides approximately 30 percent additional energy savings.

These savings are directly attributable to the adoption of TSV technology, which enables a multi-stacked chip to function at levels comparable to a single silicon chip by shortening signal lines significantly, thereby lowering power consumption and achieving higher density and operational speed.

Samsung has collaborated with CPU and controller designers in addition to some current server system customers to facilitate quicker adoption of 3D-TSV server modules, and to pave the way for more easily supporting 32GB and higher-density memory modules based on 20nm-class DDR3 for use in high-capacity servers.





Source: Samsung Electronics Press Release
Links

Tags: 3d  |  3d tsv  |  ddr3  |  ram  |  samsung  |  tecnologia

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