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 25.11.2008   Intel e Micron annunciano la produzione in massa di flash a 34nm
 

Intel Corporation e Micron Technology hanno annunciato il principio della fase di produzione in massa delle memorie NAND flash di tipo multi-level cell (MLC) a 32Gbit, realizzate con un processore tecnologico a 34nm. I chip, che si fanno notare per le dimensioni fisiche ridotte al punto tale che possono essere inglobati in un package di tipo TSOP (Thin Small-Outline Package), sono stati sviluppati dalla società IM Flash Technologies (IMFT), nata proprio nell'ambito della join venture tra i due giganti.

A beneficiare delle nuove soluzioni tecnologiche saranno i dischi a stato solido, tipicamente impiegati in device molto comuni come le macchine fotografiche, le telecamere e i player digitali, ed in particolare verrà incrementata la capacità di memorizzazione degli SSD senza innalzarne la dimensione fisica.



Boise, Idaho and Santa Clara, Calif. , lunedì 24 novembre 2008 – Intel Corporation and Micron Technology Inc. today announced mass production of their jointly developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device. Developed and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT), the process technology is the most advanced process available on the market and enables the industry’s only monolithic 32 Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP). The companies are ahead of schedule with 34nm NAND production, expecting their Lehi facility to have transitioned more than 50 percent of its capacity to 34nm by year’s end.

"We have made great strides in NAND process capability and are now in a leadership role with 34nm production," said Brian Shirley, vice president of Micron’s Memory Group. "The tiny 34nm, 32 Gb chip enables our customers to easily increase their NAND storage capacity for a number of consumer and computing products."

"The results from IMFT continue to exceed our expectations," said Randy Wilhelm, vice president and general manager, Intel NAND Solutions Group. "With such clear leadership in NAND manufacturing, we are able to offer our customers NAND solutions with great value, performance and low power."

The 34nm, 32 Gb chips are manufactured on 300 mm wafers. Measuring just 172mm², less than the size of a thumbnail, the 34nm, 32 Gb chip will cost-effectively enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders. Additionally, the chip will enable more cost-effective solid-state drives, dramatically increasing their current storage capacity.

The companies also plan to begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.





Source: Intel & Micron Press Release
Links

Tags: 34nm  |  flash  |  intel  |  memoria di massa  |  micron  |  produzione

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