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 30.04.2013   Samsung: in produzione i chip di LPDDR3 a 20nm per i sistemi mobile
 

Samsung Electronics ha annunciato il passaggio in produzione dei suoi chip di RAM di tipo LPDDR3 (Low Power Double Data Rate 3), fabbricati con un processo a 20nm e caratterizzati da una densità pari a 4Gb (gigabit).

I nuovi chip di LPDDR3 da 4Gb, il cui target applicativo è rapppresentato dai sistemi di tipo mobile, sono in grado, in accordo al comunicato stampa ufficile, che vi presentiamo di seguito in lingua originale, di supportare un data rate massimo pari a 2133Mbps, che risulta essere quindi oltre due volte superiore a quello delle memorie DRAM a basso consumo, o LPDDR2, per le applicazioni mobile, che sappiamo essere capaci di trasferire dati fino a 800Mbps.

Per fissare le idee, con simili prestazioni, peraltro perfettamente comparabili con quelle delle memorie DDR3 utilizzate in ambito PC, è possibile trasferire tre video Full HD, caratterizzati da una dimensione totale pari a 17GB, in un secondo.

Rispetto alle memorie LPDDR3 dello stesso maker, prodotte invece a 30nm, il miglioramento in termini di performance è pari a 30%, mentre la riduzione del consumo di potenza ammonta al 20%.

Samsung ha sottolineato che quattro chip di LPDDR3 da 4Gb possono essere inclusi in un package da 2GB la cui dimensione in altezza è pari a soli 0.8mm; appare evidente la semplificazione che una simile tecnologia assicura ai progettisti dei sistemi mobile, smartphone e tablet in primis, e agli OEM.


[Immagine ad alta risoluzione]


Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry’s first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node.

The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

"By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "Our 20nm-class four gigabit mobile DRAM provides another example of our ability to deliver well-differentiated, high-performance, high-density memory to customers in a timely manner."

The 4Gb LPDDR3 can transmit data at up to 2,133 megabits per second (Mbps) per pin, which is more than double the performance of the preceding memory standard mobile DRAM (LPDDR2) with a data transmission speed of 800Mbps. This makes it possible to transmit three full HD videos, collectively 17 Gigabytes (GBs) in length, in one second over the new Samsung chip embedded in a mobile device.

Samsung's 20nm-class LPDDR3 mobile DRAM enables seamless display of full HD video on smartphones with five inch-or-larger screens. In comparison to a 30nm-class LPDDR3 DRAM, the new device generates more than a 30 percent improvement in performance and 20 percent savings in power consumption.

While mobile gadgets continue to scale down in height, battery packs have been increasing in size. By adopting Samsung's 4Gb LPDDR3 mobile DRAM, OEMs can have a 2GB package that includes four of Samsung’s new chips in a single package that meets the memory package height of 0.8 millimeters (mm).





Source: Samsung Electronics Press Release
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Tags: comunicato stampa  |  dram  |  lpddr3  |  mobile  |  produzione  |  samsung  |  smartphone  |  tablet

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