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 09.05.2012   Micron completa lo sviluppo dei suoi primi moduli di DDR4
 

Micron Technology ha reso noto di recente di aver completato lo sviluppo del suo primo modulo, pienamente funzionante, di memoria DRAM di tipo DDR4. Inoltre, il noto memory maker ha anche annunciato di aver già avviato la fase di invio dei primi campioni di tali moduli ai clienti/partner, nell'ottica di arrivare alla commercializzazione dei prodotti finali DDR4 nel corso del 2013.

I nuovi moduli di DDR4 sono stati sviluppati da Micron in collaborazione con Nanya utilizzando il processo di fabbricazione a 30nm: ogni modulo integra al momento 8 chip di DDR4 da 4-gigabit (Gb), anche se è pianificato il lancio di soluzioni con capacità più elevata, realizzate con l'ausilio di 16 o 32 chip di DDR4.

In accordo a Micron, non appena l'organismo JEDEC finalizzerà le specifiche di DDR4, i suoi moduli saranno ben presto resi pienamente aderenti a tali specifiche; la roadmap che conduce alla commercializzazione di questi nel 2013 passa, infine, per l'avvio della produzione in volumi, fissato per l'ultimo trimestre dell'anno corrente.



Micron Technology, Inc. (Nasdaq:MU), one of the world's leading providers of advanced semiconductor solutions, today announced development of its first fully functional DDR4 DRAM module. The company has begun sampling and has received feedback from major customers to support quick implementation for applications in 2013.

It is expected that the enterprise and micro-server markets will take full advantage of the new features and specifications designed into DDR4, accelerating early adoption of the technology. In addition, the fast-growing ultrathin client and tablet markets will also benefit from new opportunities enabled by the power savings and performance features of Micron's DDR4.

Codeveloped by Nanya and based on Micron's 30-nanometer (nm) technology, the 4-gigabit (Gb) DDR4 x8 part is the first piece of what is expected to be the industry's most complete portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC). For the soldered down space, x8, x16, and x32 components will also be available, with initial speeds up to 2400 megatransfers per second (MT/s), increasing to the JEDEC-defined 3200 MT/s.

"With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development," said Brian Shirley, vice president for Micron's DRAM Solutions Group. "We've provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production."

As JEDEC finalizes the DDR4 specifications, Micron is positioned to quickly become fully compliant with its 30nm 4Gb DDR4 part. Full sampling to key partners began earlier this year and volume production is planned for 4Q12.





Source: Micron Press Release
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Tags: ddr4  |  micron  |  sviluppo

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