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 21.12.2010   Elpida, in arrivo DDR3 SO-DIMM da 4GB nel primo trimestre 2011
 

Mediante il comunicato stampa di seguito allegato, il fornitore di memoria di tipo Dynamic Random Access Memory (DRAM) Elpida Memory ha annunciato di aver avviato le spedizioni dei primi sample di moduli di memoria DDR3 DDR3 SO-DIMM, prodotti con l'ausilio di un processo in tecnologia a 30nm e caratterizzati da una densità pari a 4GB (4 gigabyte), ottenuti mediante l'adozione di 16 chip di DDR3 SDRAM aventi ciascuno una densità pari a 2Gb (2 gigabit).

In accordo a Elpida, i nuovi moduli da 4GB @ 30nm, assicurano, rispetto alle attuali soluzioni a 40nm, una riduzione della corrente di polarizzazione pari al 20% in condizioni operative standard e al 30% circa in standby. Ne consegue un rilevante contenimento del consumo di potenza, il che garantisce naturalmente una maggiore durata delle batterie dei notebook, dei netbook, dei tablet PC e, più in generale, di tutti i sistemi mobile che li utilizzeranno.

Il passaggio in produzione dei nuovi moduli, che promettono anche una diminuzione dei costi per il passaggio dalla tecnologia di fabbricazione a 40nm a quella a 30nm, avverrà nel corso del primo trimestre del 2011.


[Immagine ad alta risoluzione]


Elpida Memory, Inc. (TOKYO: 6665), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced it has begun sample shipments of its newly developed 30nm process 4-gigabyte DDR3 SO-DIMM. The new memory module was built using currently available advanced 30nm process DRAM manufacturing technology and is composed of sixteen 2-gigabit DDR3 SDRAMs. It achieves a high density of 4 gigabytes.

Compared with Elpida's 40nm DRAM module, the new product uses 20% less operating current and 30% less standby current consumed by PC systems, and as a DRAM module it achieves one of the lowest levels of current consumption in the industry. The new eco-friendly DRAM product provide an effective power-saving response to today's need for a longer battery life for notebook PCs, netbooks, tablet PCs and other handheld electronic devices.

Also, the new module offers a data transfer rate of up to 1866 Megabits per second (Mbps). It can support the high performance and high functionality of computer devices that have to manage steadily increasing data volumes.

As Elpida is making a shift from 40nm to 30nm manufacturing, limiting the change in the manufacturing process can help reduce the need for new investment and lower cost. The new module uses 30nm advanced process technology to not only improve performance but to also achieve a much higher level of cost competitiveness.

Elpida plans to begin mass manufacture of the 4-gigabyte DDR3 SO-DIMM in the first quarter of CY 2011.





Source: Elpida Press Release
Links

Tags: ddr3  |  elpida  |  so-dimm

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