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 29.06.2010   Samsung realizza moduli LRDIMM di DDR3 per server da 32GB
 

Samsung Electronics ha annunciato il completamento dello sviluppo di moduli di memoria per server di tipo LRDIMM (Load-Reduced & Dual-Inline DIMM) caratterizzati da una capacità di memorizzazione pari a ben 32GB (32 gigabyte); in accordo al produttore, la produzione in volumi delle DIMM avrà luogo nella seconda parte dell'anno corrente.

Samsung Electronics ha realizzato questi moduli di LRDIMM mediante l'assemblaggio sul PCB di 72 chip di DDR3 da 4Gb, prodotti con tecnologia a 40nm; un buffer, che implementa la feature "Load-Reduced" delle DIMM, viene impegato per contenere una parte dei dati, evitando che essi debbano essere veicolati ai chip di DDR3 e riducendo quindi il carico di lavoro di questi ultimi.

Samsung Electronics dichiara inoltre che le nuove LRDIMM possono essere polarizzate con una tensione pari a 1.35V oppure 1.5V e che un server equipaggiato con tali moduli può elaborare i dati con un livello prestazionale che raggiunge anche la soglia di 1.333 Mbps (Megabit al secondo).


[Immagine ad alta risoluzione]


Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 32 gigabyte (GB) load-reduced, dual-inline memory module (LRDIMM), for server applications.

Samsung will begin mass producing the 32GB LRDIMM in the second half of this year, giving it the largest family of DRAM offerings in the industry.

Using cutting-edge 40 nanometer-class*, four gigabit (4Gb) DDR3 chips, which Samsung introduced earlier this year, the new 32GB LRDIMM accommodates next generation servers designed for virtualization, cloud computing and other high-capacity applications.

"In developing the industry’s first load-reduced module with 40nm-class* DDR3 technology, we are underscoring our determination to combine the best of capacity and performance for the newest generation of servers," said Dong-Soo Jun, executive vice president, memory marketing, Semiconductor Business, Samsung Electronics.

Samsung’s 32GB LRDIMM prototype consists of 72 4Gb DDR3 chips and an additional memory buffer chip to help reduce the load on the memory subsystem by as much as 75 percent.

By using 32GB LRDIMMs, memory capacity can rise up to 384 gigabytes per CPU. In a two-way server system, capacity can be increased up to 768GB, or about 1.5 times that of a 512GB server system equipped with 32GB DDR3 RDIMMs.

A server equipped with LRDIMMs can process data at 1.333 Megabit per second (Mbps), approximately 70 percent faster than the previous speed of 800 Mbps. Samsung’s LRDIMMs operate at 1.35 or 1.5 volts.





Source: Samsung Electronics Press Release
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