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 19.04.2010   Samsung realizza le prime SD basate su NAND MLC a 20nm
 

Con il comunicato stampa di seguito allegato, Samsung Electronics ha annunciato la realizzazione di chip di NAND MLC aventi una capacitą di 32Gb (gigabit), prodotti in tecnologia a 20nm e destinati all'utilizzo per la fabbricazione di memory card di tipo Secure Digital (SD).

In accordo al produttore, i nuovi chip di NAND MLC rendono possibile la realizzazione di SD pił veloci di circa il 30% rispetto a quelle basate su NAND MLC a 30nm (le velocitą dichiarate da Samsung sono pari a 20MB/s in lettura e a 10MB/s in scrittura, ndr). Samsung promette inoltre miglioramenti anche nell'ottica dell'affidabilitą.

I primi sample engineering di Secure Digital con NAND MLC da 20nm sono state inviate ai principali clienti ed entreranno in produzione entro fine anno. Le capacitą di memorizzazione delle nuove SD saranno comprese tra 4GB e 64GB.


[Immagine ad alta risoluzione]


Seoul, Korea - April 19, 2010 - Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced the industry's first production of 20 nanometer (nm) class NAND chips for use in Secure Digital (SD) memory cards and embedded memory solutions. Based on this cutting-edge technology, the introduction of 32 gigabit (Gb) MLC NAND will expand the company's memory card solutions for smart phones, high-end IT applications and high-performance memory cards.

Mr. Soo-In Cho, president, Memory Division, Samsung Electronics, said "In just one year after initiating 30nm-class NAND production, Samsung has made available the next generation node 20nm-class NAND, which exceeds most customers requirements for high-performance, high-density NAND-based solutions." He added, "The new 20nm-class NAND is not only a significant step forward in process design, but we have incorporated advanced technologies into it to enable substantial performance innovation."

Samsung's 20nm-class MLC NAND has a 50 percent higher productivity level than 30nm-class MLC NAND. The write performance of a 20nm-class-based, eight gigabyte (GB) and higher density, SD card is 30 percent faster than the 30nm-class NAND and it delivers a speed-class rating of 10 (read speed of 20MB/s, write speed of 10MB/s). By applying cutting-edge process, design and controller technology, Samsung also has secured reliability levels comparable to 30nm-class NAND.

Samsung Electronics first began producing 32Gb NAND with 30nm-class process technology in March 2009. Now it is shipping SD card samples to customers that are built with 20nm-class 32Gb NAND and will expand production later this year.

Memory cards based in the 20nm-class will be available from 4GB through 64GB densities

Samsung's timely introduction of its high-performance premium NAND will better support the growing memory requirements of high-density smartphones, high-end IT applications and high-performance memory cards.





Source: Samsung Electronics Press Release
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